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| MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-24 * * * * * IC Collector current ........................ 200A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo dvives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 113 25 25 21.5 B2X B2 E2 6 15 6 6 15 6 14 B2 B1 E1 E2 70 C2E1 E2 C1 5.5 8 C2E1 B1X E2 E1 B1 4-6.5 93 Tab#110, t=0.5 3-M6 17 8 17 8 17 6.5 31 LABEL 7 21 90 B2X B1X C1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 200 200 1560 10 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 870 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=200A, IB=4A -IC=200A (diode forward voltage) IC=200A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=200A, IB1=-IB2=4A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 300 3.0 3.5 1.8 -- 3.0 15 3.0 0.08 0.35 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 400 Tj=25C 10 4 7 5 3 2 10 3 7 5 3 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 320 IB=4A 240 IB=2A IB=1A A IB=0.5 0.2A IB= 160 DC CURRENT GAIN hFE 5 80 0 0 1 2 3 4 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 0 2 3 45 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 2.2 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) Tj=25C VCE=2.8V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 VBE(sat) SATURATION VOLTAGE VCE(sat) Tj=25C Tj=125C IB=4A 2 3 4 5 7 10 2 2 3 4 5 7 10 3 2.4 2.6 2.8 3.0 3.2 10 -1 10 1 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 3 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 2 ts 10 1 7 5 4 3 2 10 0 7 5 4 3 10 1 tf Tj=25C Tj=125C VCC=600A IB1=-IB2=4A 4 3 IC=150A IC=200A SWITCHING TIME 2 ton 1 Tj=25C Tj=125C 0 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 COLLECTOR CURRENT IC (A) 2 ts, tf (s) 10 1 7 5 4 3 2 Tj=25C Tj=125C 10 0 7 VCC=600V 5 IC=200A 4 IB1=4A 3 10 0 2 3 4 5 7 10 1 REVERSE BIAS SAFE OPERATING AREA 400 Tj=125C IB2=-4A 300 IB2=-8A 200 ts SWITCHING TIME tf 100 2 3 4 5 7 10 2 0 0 200 400 600 800 1000120014001600 VCE (V) BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 DC DERATING FACTOR OF F. B. S. O. A. 100 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC (C) COLLECTOR DISSIPATION SECOND BREAKDOWN AREA COLLECTOR CURRENT IC (A) 100s 1ms 50s 200s 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 0.10 0.08 Zth (j-c) (C/ W) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) 10 1 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 2000 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 Tj=25C 5 Tj=125C 3 VCC=600V 2 IB1=-IB2=4A 10 2 7 5 3 2 10 2 1600 Irr 10 1 Qrr 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 10 0 7 trr 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 1200 Irr (A), Qrr (c) |
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